Semiconductor device

ABSTRACT

A semiconductor device having a housing is provided, where the housing includes the first surface, concave portions provided to the first surface, the second surface to face toward the first surface, and convex portions provided in contact with the second surface. In a thickness direction of the housing directed from the first surface to the second surface, the concave portions and the convex portions are provided at positions corresponding to each other.

The contents of the following Japanese patent application(s) areincorporated herein by reference:

-   -   NO. 2017-174553 filed in JP on Sep. 12, 2017.

BACKGROUND

1. Technical Field

The present invention relates to a semiconductor device.

2. Related Art

Conventionally, a lead terminal arranged on the bottom surface of apackage body has been provided with protruding portions (refer to PatentDocuments 1 and 2, for example). Also, a surface of a resin case hasbeen provided with a lead fitting groove (refer to Patent Document 3,for example).

PRIOR ART DOCUMENTS Patent Documents

Patent Document 1: Japanese Patent Application No. 2005-11854.

Patent Document 2: Japanese Unexamined Utility Model ApplicationPublication No. S58-168141.

Patent Document 3: Japanese Unexamined Utility Model ApplicationPublication No. H5-8929.

Generally, identification information about a semiconductor device isimprinted, character printed, or attached on a surface of a housing ofthe device. Once the surface of the housing is damaged or stained, itmay be difficult to identify the identification information.

SUMMARY

In the first aspect of the present invention, a semiconductor device isprovided. The semiconductor device may have a housing. The housing mayinclude the first surface, concave portions, the second surface, andconvex portions. The first surface may be provided with the concaveportions. The second surface may face toward the first surface. Theconvex portions may be provided in contact with the second surface. In athickness direction of the housing, the concave portions and convexportions may be provided at positions corresponding to each other. Thethickness direction of the housing may be a direction directed from thefirst surface to the second surface.

The second length of the convex portions may be greater than the firstlength of concave portions. The second length of the convex portions maybe a length from the second surface to ends of the convex portions inthe thickness direction. The first length of a concave portion may be alength from the first surface to an end of the concave portion oppositefrom the first surface in the thickness direction.

The semiconductor device may include a heat dissipation member. The heatdissipation member may be externally exposed on the first surface or thesecond surface.

The housing may have identification information. At least one of thefirst surface and the second surface may be provided with theidentification information.

The second length of a convex portion may be greater than a lengthobtained by adding a protruding length of the heat dissipation memberand the first length of a concave portion. The second length of theconvex portions may be a length from the second surface to ends of theconvex portions in the thickness direction. The protruding length of theheat dissipation member may be a protruding length to protrude from thefirst surface or the second surface. The first length of a concaveportion may be a length from the first surface to an end of the concaveportion opposite from the first surface in the thickness direction.

The semiconductor device may further include external connectionterminals. The external connection terminals may protrude from thesecond surface. Difference between the second length and the protrudinglength from the second surface to an end of an external connectionterminal opposite from the second surface in the thickness direction maybe greater than the first length.

The heat dissipation member may have identification information insteadof the first surface or the second surface where the heat dissipationmember is externally exposed is provided with the identificationinformation. An end surface of the heat dissipation member, the endsurface being externally exposed, may be provided with theidentification information.

Outlines of the concave portions may be greater than outlines of theconvex portions in the housing as seen in a direction parallel with thethickness direction.

The housing may have two concave portions and two convex portions.

The housing may have three concave portions and three convex portions.The three concave portions may not all need to be provided on a singlestraight line. The three convex portions may not all need to be providedon a single straight line.

Outer outlines of the first surface and the second surface may be inrectangular shapes in the housing as seen in a direction parallel withthe thickness direction. The housing may have four concave portions andfour convex portions. Corners of the first surface may be provided withthe four concave portions respectively. Corners of the second surfacemay be provided with the four convex portions respectively.

The concave portions may have shapes different from each other in thefirst surface as seen in a direction parallel with the thicknessdirection. The convex portions may have shapes different from each otherif the second surface as seen in a direction parallel with the thicknessdirection. If a plurality of housings is made to overlap each other inthe thickness direction, the convex portions may have shapes to fit theconcave portions that are provided at corresponding positions in thethickness direction.

The first surface and the second surface may be in rectangular shapes.The housing may have concave portions provided extending along twoopposing sides of the first surface respectively and convex portionsprovided extending along two opposing sides of the second surfacerespectively.

The housing may have concave portions provided extending along threesides of the first surface respectively and convex portions providedextending along three sides of the second surface respectively.

The housing may have concave portions provided extending along foursides of the first surface respectively and convex portions providedextending along four sides of the second surface respectively.

The housing may have concave portions annularly provided on the firstsurface, and convex portions annularly provided on the second surface.

The housing may include a frame member and a resin sealing member. Theresin sealing member may be provided inside the frame member as theframe member is seen in the thickness direction. A surface of a resinsealing member may constitute a part of the first surface or a part ofthe second surface. The frame member may be provided with concaveportions and convex portions.

The housing may include a frame member and a resin sealing member. Theresin sealing member may be provided inside the frame member as theframe member is seen in the thickness direction. The first surface andthe second surface may be surfaces of the resin sealing member. Theresin sealing member may be provided with concave portions and convexportions.

In the housing, the first surface, the second surface, and side surfacesmay be formed of the same resin material respectively. The side surfacesof the housing may be positioned between the first surface and thesecond surface in the thickness direction. A semiconductor device mayinclude a heat dissipation member. The heat dissipation member may beexternally exposed on the first surface or the second surface.

In the second aspect of the present invention, a semiconductor device isprovided. The semiconductor device may have a housing and a heatdissipation member. The housing may have the first surface and thesecond surface, which are surfaces of a resin member respectively. Thesecond surface may face toward the first surface. The heat dissipationmember may be externally exposed from the housing on the first surface.If the housing has convex portions provided in contact with the secondsurface, the heat dissipation member may have concave portions providedto an end surface of the heat dissipation member. Instead of this, ifthe housing has concave portions provided to the second surface, theheat dissipation member may have convex portions provided in contactwith an end surface of the heat dissipation member. Note that, in thethickness direction of the housing directed from the first surface tothe second surface, concave portions and convex portions may be providedat positions corresponding to each other.

Note that, the summary clause does not necessarily describe allnecessary features of the embodiments of the present invention. Thepresent invention may also be a sub-combination of the featuresdescribed above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 100 in the first embodiment.

FIG. 2 illustrates (A) of FIG. 1 in which a resin sealing member 26 istaken off.

FIG. 3 illustrates a cross section taken along A-A in FIG. 2.

FIG. 4 illustrates a transporting box 400 encasing a stack 250 in whicha plurality of semiconductor devices 100 is stacked up in the Zdirection.

FIG. 5 illustrates a transportation method of the stack 250 of thesemiconductor devices 100.

FIG. 6 illustrates a comparative example in which one semiconductordevice 800 is encased in each space 610 of a rack 600.

FIG. 7 illustrates a comparative example in which a plurality ofsemiconductor devices 800 is encased in a stick type case 700.

FIG. 8 illustrates a state of the present embodiment in which a robotarm 500 is used to move semiconductor devices 100 on a passage 510.

FIG. 9 is a drawing to explain outlines of concave portions 22 andoutlines of convex portions 24.

FIG. 10 illustrates another example of lead frames 30.

FIG. 11 illustrates an example in which a heat dissipation member 40 isexternally exposed on the second surface 14.

FIG. 12 illustrates the first modification examples of concave portions22 and convex portions 24.

FIG. 13 illustrates the second modification examples of concave portions22 and convex portions 24.

FIG. 14 illustrates the third modification examples of concave portions22 and convex portions 24.

FIG. 15 illustrates the fourth modification examples of concave portions22 and convex portions 24.

FIG. 16 illustrates the fifth modification examples of concave portions22 and convex portions 24.

FIG. 17 illustrates the sixth modification examples of concave portions22 and convex portions 24.

FIG. 18 illustrates the seventh modification examples of concaveportions 22 and convex portions 24.

FIG. 19 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 110 in the second embodiment.

FIG. 20 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 120 in the third embodiment.

FIG. 21 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 130 in the fourth embodiment.

FIG. 22 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 140 in a modification example of thefourth embodiment.

FIG. 23 illustrates a state of placing a semiconductor device 140 on acooler 300.

FIG. 24 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 150 in the fifth embodiment.

FIG. 25 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 160 in a modification example of the fifthembodiment.

FIG. 26 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 170 in the sixth embodiment.

FIG. 27 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 180 in the seventh embodiment.

FIG. 28 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 190 in the eighth embodiment.

FIG. 29 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 200 in the ninth embodiment.

FIG. 30 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 210 in the tenth embodiment.

FIG. 31 illustrates the inside of a housing 10 in the side view (B) ofFIG. 30.

FIG. 32 is an exploded perspective view of a semiconductor device 210.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, the present invention will be described with reference toembodiments of the invention. However, the following embodiments shouldnot to be considered as limiting the claimed invention. Also, everycombination of features described with reference to the embodimentsshould not to be considered essential to means provided by aspects ofthe invention.

FIG. 1 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 100 in the first embodiment. In thepresent specification, an X axis direction and a Y axis direction aremutually orthogonal directions, and a Z axis direction is a directionperpendicular to an X-Y plane. The X axis direction, Y axis direction,and Z axis direction form a so-called right-hand system. Note that, inthe present specification, a direction parallel with the Z axisdirection may be referred to as a thickness direction of a housing 10.In the present specification, a +Z direction and a −Z direction may bereferred to as “upward” and “downward”, respectively. However, suchterms as “upward” and “downward” are not limited to an up-down directionaccording to the gravitational direction. These terms are merely toindicate relative directions with respect to the Z axis.

The semiconductor device 100 may be a semiconductor package having asemiconductor chip inside a housing 10. The semiconductor device 100 maybe used as a semiconductor module in a power inverter circuit, such as amotor driving inverter or a DC/DC converter. The semiconductor device100 may be an IPM (Intelligent Power Module) having: a power device suchas a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) oran IGBT (Insulated Gate Bipolar Transistor); and a driving circuit and aself-protection function for the power device. Also, the semiconductordevice 100 may be a discrete semiconductor chip such as a BJT (BipolarJunction Transistor), a FET (Field Effect Transistor), or an IGBT.

The semiconductor device 100 of the present example has a housing 10, aplurality of lead frames 30, and a heat dissipation member 40. Thehousing 10 may be in a cuboid shape. The housing 10 is also referred toas a package body. The housing 10 in the present example includes aframe member 20 and a resin sealing member 26. The entire housing 10 maybe formed of resin, and the frame member 20 may also be formed of resin.That is, the material of the housing 10 may be resin. For example, theframe member 20 is formed of

polyphenylenesulfide (PPS) resin or polybutylene terephthalate (PBT)resin. Also, the resin sealing member 26 is formed of epoxy resin, forexample. Note that, the frame member 20 and the resin sealing member 26may be formed of the same resin material.

The housing 10 may have the first surface 12, and the second surface 14to face toward the first surface 12 in the Z axis direction. In thepresent example, the first surface 12 and the second surface 14 aresurfaces parallel with the X-Y plane. Also, the first surface 12 and thesecond surface 14 are the lower surface and the upper surface of thehousing 10, respectively. More specifically, the first surface 12 of thepresent example is an end surface of the housing 10 in the −Z directionif assuming that there is no concave portion 22. Also, the secondsurface 14 of the present example is an end surface of the housing 10 inthe +Z direction if assuming that there is no convex portions 24, and isalso a surface with which the frame member 20 and the resin sealingmember 26 are provided flush.

As shown in (A) and (C) of FIG. 1, outer outlines of the first surface12 and the second surface 14 are in rectangular shapes in the housing 10as seen in a direction parallel with the Z axis direction. Although thehousing 10 of the present example shown in (A) and (C) is in anapproximately square shape, it may be in a rectangular shape in anotherexample. The housing 10 of the present example includes four concaveportions 22 respectively provided at corners of the first surface 12,and four convex portions 24 respectively provided at corners of thesecond surface 14.

In the present example, if a plurality of housings 10 is stacked up inthe Z axis direction, the convex portions 24 can fit concave portions22. Note that, in the present example, any three or more of the concaveportions 22 are not provided on a single straight line. Thereby, theplurality of housings 10 can be stably stacked up in the presentexample, compared to a case in which two pairs or three pairs of aconcave portion 22 and a convex portion 24 are provided. Also, in thepresent example, if a plurality of housings 10 is stacked up in the Zaxis direction, it is possible to suppress one housing 10 from beingmisaligned from its original position by rotating around the Z axisrelative to another housing 10 (θ misalignment). Also, the concaveportions 22 and the convex portions 24 can be utilized for positioningthe semiconductor device 100 in a case in which the semiconductor device100 is placed on another member, substrate, or the like.

The resin sealing member 26 may be provided inside the frame member 20as the frame member 20 is seen in the thickness direction of the housing10. In the present example, the resin sealing member 26 is providedinside the frame member 20 in the housing 10 as seen in a directiondirected from the second surface 14 to the first surface 12 as shown in(A) of FIG. 1, and a direction directed from the first surface 12 to thesecond surface 14 as shown in (C) of FIG. 1.

In the present example, the frame member 20 has the concave portions 22and the convex portions 24. The first surface 12 may be provided withthe concave portions 22. As shown in (B) of FIG. 1, the concave portions22 in the present example are portions recessed upward from the firstsurface 12, and provided at a part of the frame member 20. In thepresent example, a length from the first surface 12 to ends 23 of theconcave portions 22 in the +Z direction is defined as the first lengthL₁. In the present example, the ends 23 is an end of a concave portion22 opposite from the first surface 12 in the thickness direction of thehousing 10.

The convex portions 24 may be provided in contact with the secondsurface 14. The convex portions 24 of the present example are positionedon the second surface 14. Note that, although the convex portions 24 aremarked with dotted hatching and the frame member 20 is not marked withhatching in (B) of FIG. 1, the convex portions 24 of the present exampleconstitute a part of the frame member 20. Furthermore, in a differentexample, the convex portions 24 may be formed of a material differentfrom that of a frame member 20. In the different example, the convexportions 24 may be formed of glass having hardness higher than that of aresin material that composes the frame member 20. In the presentexample, a length from the second surface 14 to ends 25 of convexportions 24 in the +Z direction is defined as the second length L₂. Inthe present example, the end 25 is an end of a concave portion 22opposite from the second surface 14 in the thickness direction of thehousing 10.

In the present example, a portion of the lower surface of the framemember 20 excluding the concave portions 22 constitutes a part of thefirst surface 12. Also, a portion of the upper surface of the framemember 20 excluding the convex portions 24 constitutes a part of thesecond surface 14. Note that, as shown in (B) of FIG. 1, surfaces of theresin sealing member 26 constitute a part of the first surface 12 andthe second surface 14.

The heat dissipation member 40 may be externally exposed on the firstsurface 12 of the housing 10. The heat dissipation member 40 of thepresent example protrudes from the first surface 12 to the outside. Inthe present example, a length from the first surface 12 to an endsurface 41 of the heat dissipation member 40 positioned outside thehousing 10 is defined as a protruding length h of the heat dissipationmember 40. Note that, although the protruding length h of the presentexample has a positive value, a protruding length h may be zero inanother example. That is, an end surface 41 of a heat dissipation member40 may also be flush with the first surface 12. In the presentspecification, stating that the heat dissipation member 40 is externallyexposed on the first surface 12 includes a case in which the protrudinglength h has a positive value and a case in which it is zero.

As shown in (A) of FIG. 1, the semiconductor device 100 of the presentexample has a piece of identification information 15 on the secondsurface 14 of the housing 10. The piece of identification information 15may be information used to allow individual semiconductor devices 100 tobe identified. To enumerate examples, the piece of identificationinformation 15 may be displayed with one-dimensional codes such asalphabetic characters, numbers, and bar codes, or two-dimensional codessuch as data matrix and QR™ codes, or a combination thereof. Also, thehousing 10 may be provided with the piece of identification information15 by a means such as: character printing or printing in which thehousing 10 is directly provided with ink; selectively cutting a surfaceof the housing 10 by a laser; providing a surface of the housing 10 withan imprint; selectively burning the housing 10 to leave a burnt color;or attaching a sticker or the like having the piece of identificationinformation 15 on the housing 10.

The piece of identification information 15 may be information opticallyreadable by a piece of equipment. By electrically handling informationread out from the piece of identification information 15, it will bepossible to track each semiconductor device 100 from its production stepto consumption step through a mechanism of IoT (Internet of Things). Inthe present example, by providing concave portions 22 and convexportions 24 to be described below, the piece of identificationinformation 15 can be appropriately protected. Thereby, traceability ofsemiconductor devices 100 can be ensured.

As shown in (C) of FIG. 1, the semiconductor device 100 of the presentexample has a piece of identification information 13 on the end surface41 of the heat dissipation member 40. The piece of identificationinformation 13 may be displayed by the same displaying method as that ofthe piece of identification information 15, i.e., displayed withalphabetic characters, numbers, codes, and the like, and may be providedby the same means as that of the piece of identification information 15.Of course, the piece of identification information 13 may also beutilized for the traceability. In the present example also, by providingconcave portions 22 and convex portions 24 to be described below, thepiece of identification information 13 can be appropriately protected.Hence, in both of the second surface 14 and the end surface 41,traceability of the semiconductor device 100 can be ensured.

Concave portions 22 and convex portions 24 may be provided at positionscorresponding to each other in the thickness direction of the housing10. Also, if the first surface 12 of the first housing 10 and the secondsurface 14 of the second housing are made to overlap each other, convexportions 24 may fit concave portions 22. In the present example, thesecond length L₂ is greater than the length obtained by adding thelength h to the first length L₁ (h+L₁), (i.e., h+L₁<L₂). Thereby, if aplurality of semiconductor devices 100 is stacked up in the Z axisdirection, it is possible to prevent an end surface 41 of a heatdissipation member 40 of the first semiconductor device 100 and thesecond surface 14 of the second semiconductor device 100 from contactingeach other. That is, it is possible to stack up a plurality of housings10 in the Z axis direction while keeping clearance between the secondsurface 14 of a housing 10 and an end surface 41 of a heat dissipationmember 40 adjacent to each other in the Z axis direction.

In the present example, since it is possible to prevent an end surface41 of a heat dissipation member 40 and the second surface 14 of ahousing 10 from contacting each other, both pieces of identificationinformation 13 and 15 can be prevented from being damaged or stained.Hence, a situation where identification information becomes difficult tobe identified can be avoided. In addition, appearance defects ofsemiconductor devices 100 can be reduced.

In the present example, particularly in a case in which a plurality ofsemiconductor devices 100 is transported all together, it is possible toprevent both pieces of identification information 13 and 15 from beingdamaged or stained even if housings 10 are stacked up. Conventionally,as a result of identification information becoming difficult to beidentified, semiconductor devices 100 may have been discarded even ifthe semiconductor devices 100 had no problems in their performance.However, in the present example, by preventing identificationinformation from being damaged or stained, it is possible to avoid asituation where semiconductor devices 100 having no problems in theirperformance are discarded.

Note that, if a plurality of semiconductor devices 100 is stacked up ina predetermined range of length in the Z axis direction, the smaller theclearance (L₂−L₁−h), the more semiconductor devices 100 can be stackedup (provided L₂−L₁−h is greater than zero). Thereby, it is possible toimprove transportation efficiency of a plurality of semiconductordevices 100. The clearance (L₂−L₁−h) may be greater than zero and equalto or less than the thickness of a housing 10 in the Z axis direction.In one example, thickness, the first length L₁, the second length L₂,and a protruding length h of a housing 10 are 5 mm, 0.5 mm, 1 mm, and0.1 mm in the Z axis direction, respectively.

Each of the plurality of lead frames 30 may protrude from a side surface16 of a housing 10 to the outside. In the present example, among fourside surfaces 16 of the housing 10, one lead frame 30-1 protrudes in the+X direction from a side surface 16-1 positioned at the end in the +Xdirection, and three lead frames 30-2, 30-3, and 30-4 protrude in the −Xdirection from another side surface 16-3 positioned at the end in the −Xdirection. Note that, the number of the lead frames 30 is not limited tofour. Furthermore, in another example, lead frames 30 may protrude fromthe first surface 12 or the second surface 14.

FIG. 2 illustrates (A) of FIG. 1 with a resin sealing member 26 takenoff. The semiconductor device 100 may have semiconductor chips 50, wires54, 56, and 58, a metal pattern layer 48, and an insulating layer 46inside a frame member 20. The semiconductor device 100 of the presentexample has two semiconductor chips 50-1 and 50-2. The semiconductorchips 50 are a RC-IGBT (Reverse Conducting-IGBT) semiconductor chips,for example.

The lead frame 30-1 may be a collector connecting component in thesemiconductor device 100. The lead frame 30-1 may be electricallyconnected to collector electrodes of the semiconductor chips 50. Thelead frame 30-1 of the present example is electrically connected towires 56-1 to 56-4 in a region 32-1. The region 32-1 constitutes a partof the lead frame 30-1 and is a region positioned inside the framemember 20. Wires 56-1 to 56-4 electrically connect the region 32-1 andthe metal pattern layer 48.

The metal pattern layer 48 is provided with the semiconductor chips 50thereon. The semiconductor chips 50 may have the collector electrodes onthe lower surface side. The collector electrodes may be electricallyconnected to the metal pattern layer 48 via solder layers or the like.Also, the insulating layer 46 positioned on the heat dissipation member40 may be provided with the metal pattern layer 48 thereon. Theinsulating layer 46 may ensure electrical insulation between the metalpattern layer 48 and the heat dissipation member 40.

The semiconductor chips 50 may have emitter electrodes 55 and gate metallayers 57 on the upper surface side. An emitter electrode 55-1 and anemitter electrode 55-2 may be electrically connected to a region 32-3 ofthe lead frame 30-3 via a wire 54-1 and a wire 54-2, respectively. Thelead frame 30-3 may be an emitter connecting component in thesemiconductor device 100. The region 32-3 of the present exampleconstitutes a part of the lead frame 30-3 and is a region positionedinside the frame member 20.

A gate metal layer 57-1 may be electrically connected to a region 32-4of the lead frame 30-4 via a wire 58-1. The lead frame 30-4 may be agate connecting component in the semiconductor device 100. The region32-4 of the present example constitutes a part of the lead frame 30-4and is a region positioned inside the frame member 20. A lead frame 30-2may also be a gate connecting component in the semiconductor device 100.For example, the semiconductor chips 50-1 and 50-2 are turned on or offby the lead frames 30-4 and 30-2. A gate metal layer 57-2 may beelectrically connected to a region 32-2 that constitutes a part of thelead frame 30-2 and is a region positioned inside the frame member 20via a wire 58-2.

FIG. 3 illustrates a cross section taken along A-A in FIG. 2. The A-Across section is parallel to the X-Z plane and passes through the leadframes 30-1 and 30-3. The semiconductor chips 50 of the present exampleare placed above a stack of the heat dissipation member 40, theinsulating layer 46, and the metal pattern layer 48 via solder layers52. The material for the metal pattern layer 48 may be copper (Cu). Theinsulating layer 46 may be a resin insulating layer blended with fillerthat is formed of a material having high heat dissipation such as BN(boron nitride). The material for the heat dissipation member 40 may bealuminum (Al) or copper (Cu).

The heat dissipation member 40 of the present example has a function ofreleasing heat of the semiconductor chips 50 to the outside of thesemiconductor device 100. The heat dissipation member 40 may be arrangedon a cooler in which coolant flows. By cooling heat of the semiconductorchips 50, it is possible to prevent increase in loss caused by increasein resistance components, and thermal runaway destruction in advance,which are due to temperature rise of the semiconductor device 100. Notethat, in another example, a DCB (Direct Copper Bond) substrate having aceramics insulating layer whose surfaces are directly sandwiched bycopper, may be used instead of an insulating layer 46 and a metalpattern layer 48. Also, in case of using a DCB substrate, a heatdissipation member 40 may be provided with the DCB substrate thereon, orthe heat dissipation member 40 may be omitted and a cooler may beprovided with the DCB substrate thereon.

In yet another example, a lead frame 30 may be extended to reach thelower portion of a semiconductor chip 50, instead of providing asemiconductor device 100 with an insulating layer 46. Thereby, a leadframe 30 can serve as a metal pattern layer 48 and a heat dissipationmember 40. That is, the semiconductor chip 50 may be mounted on onesurface of an extended lead frame 30, and the surface opposite from theone surface on which the semiconductor chip 50 is mounted may be made asa heat dissipation surface corresponding to the end surface 41 of theheat dissipation member 40 mentioned above.

A manufacturing method of the semiconductor device 100 is simplyexplained as follows. First, the frame member 20 is formed. Next, thelead frames 30 are attached to the frame member 20. Note that, the framemember 20 and the lead frames 30 may be integrally formed in advance.Next, the stack of the heat dissipation member 40, insulating layer 46,and metal pattern layer 48 is fit into the frame member 20. Next, thesemiconductor chips 50 are bonded to the metal pattern layer 48 viasolder layers 52. Next, the semiconductor chips 50 and lead frames 30are connected by the wires 54, 56, and 58. Finally, the resin sealingmember 26 is poured into the frame member 20. Note that, in anotherexample, a housing 10 may be formed by transfer molding instead of aframe member 20 and a resin sealing member 26.

The concave portions 22 may correspond to inlets (i.e. gate portions)for injecting a resin material into a mold, which is used when the framemember 20 is in molding process. Also, the convex portions 24 or concaveportions 22 may function as ejector portions for pushing out the framemember 20 from the mold after pouring the resin material into the mold.For example, ejector pins provided in the mold push out the convexportions 24 or concave portions 22 from the mold to the outside.Thereby, the frame member 20 may be taken out from the mold. The presentexample is advantageous in that the mold may not need to be providedwith additional concave portions and convex portions in addition to thegate portions and ejector portions.

FIG. 4 illustrates a transporting box 400 encasing a stack 250 in whicha plurality of semiconductor devices 100 is stacked up in the Zdirection. Clearance between an end surface 41 of a heat dissipationmember 40 and the second surface 14 of a housing 10 adjacent to eachother in the Z direction is L₂−L₁−h. Convex portions of a semiconductordevice 100 positioned at an end in the +Z direction may contact with theupper plate 420 of the transporting box 400. Also, an end surface 41 ofa semiconductor device 100 positioned at an end in the −Z direction maycontact with the lower plate 410 of the transporting box 400. Thematerial of the transporting box 400 may be cardboard used as materialsof cardboard boxes, plastic such as polypropylene, or metal such asstainless steel.

The transporting box 400 may fix the stack 250 so that the stack 250does not move inside the transporting box 400. For example, the stack250 is fixed in the Z axis direction by applying pressure on the upperplate 420 in the −Z direction and by applying pressure on the lowerplate 410 in the +Z direction. For example, pressurization on the lowerplate 410 and upper plate 420 is realized by fixing the lower plate 410and upper plate 420 with side plates 430. Note that, the pressurizationmay also be realized by placing a fixing member such that the lowerplate 410, the upper plate 420, and side plates 430 are enclosed by thefixing member.

Also, the stack 250 may also be fixed in the Y axis direction by makinga side surface 16 of a housing 10 and a side plate of the transportingbox 400 that are facing each other contact each other in the Y axisdirection. In addition to this, the stack 250 may be ensured not to movein the X-Y plane direction by providing the lower plate 410 with convexportions 414 to contact with concave portions 22, and by providing theupper plate 420 with a convex portion 424 to contact with a convexportion 24 in at least one of the X and Y directions. Convex portions414 and convex portions 424 may be provided corresponding to the numberof concave portions 22 and convex portions 24 of a housing 10.

FIG. 5 illustrates a transportation method of a stack 250 ofsemiconductor devices 100. The transportation method of the presentexample includes: Step S300 for forming the stack 250; Step S310 forfixing the stack 250 inside a transporting box 400; and Step S320 fortransporting the transporting box 400. In Step S300, a plurality ofsemiconductor devices 100 may be stacked up in the Z axis direction asdescribed above. In Step S310, the stack 250 may be fixed inside atransporting box 400 as described above. In Step S320, the transportingbox 400 may be transported by conveyor belt, vehicle, ship or airplane,or the transporting box 400 may also be transported, held by a person.

FIG. 6 illustrates a comparative example in which one semiconductordevice 800 is encased in each space 610 of a rack 600. The rack 600 is arack dedicated for transporting the plurality of semiconductor devices800. By providing the inside of the rack 600 with a plurality ofdivision plates 620, the inside of the rack 600 is divided into aplurality of spaces 610. The semiconductor devices 800 are semiconductordevices in the comparative example, which do not have concave portions22 or convex portions 24. Each semiconductor device 800 according to thecomparative example also has a piece of identification information onthe upper surface of its housing or on the lower surface of its heatdissipation member 840. In the comparative example, because the lowersurface and upper surface are scratched due to a semiconductor device800 moving in a space 610, there is a chance of a piece ofidentification information provided to the lower surface or uppersurface being damaged or stained. Besides, there is a chance of all ofthe semiconductor devices 800 being damaged or stained.

In contrast, in the first embodiment (mentioned above with reference toFIG. 4), a plurality of semiconductor devices 100 that are stacked upcan be transported in a general box instead of the dedicated rack 600.Hence, cost needed for transportation can be reduced compared to thecomparative example of FIG. 6. In addition, in the example of FIG. 4mentioned above, it is possible to significantly reduce a chance ofidentification information being damaged or stained compared to thecomparative example of FIG. 6.

FIG. 7 illustrates a comparative example in which a plurality ofsemiconductor devices 800 is encased in a stick type case 700. The case700 is a case dedicated for transporting the plurality of semiconductordevices 800. The case 700 is longer in length in the Y axis directionthan a length in the X or Z axis directions. The case 700 has linearprotruding portions 710-1 and 710-2 to support the lower portions of thesemiconductor devices 800 and linear protruding portions 720-1 and 720-2to press down the upper portions of the semiconductor devices 800. Also,the case 700 has a linear wide-width protruding portion 714 with aprotruding length smaller than the linear protruding portions 710, whichis provided between the linear protruding portions 710-1 and 710-2. Theplurality of semiconductor devices 800 is encased, arranged in one linein the Y axis direction inside the case 700.

In contrast, in the first embodiment in which semiconductor devices 100are stacked up (mentioned above with reference to FIG. 4), the pluralityof semiconductor devices 100 can be transported in a general box insteadof the dedicated case 700. Hence, cost needed for transportation can bereduced compared to the comparative example of FIG. 7. In addition, inthe comparative example of FIG. 7, there is a chance of identificationinformation being damaged or stained due to the linear protrudingportions 710 and 720 scratching surfaces of the semiconductor devices800. However, in the example of FIG. 4 mentioned above, it is possibleto significantly reduce a chance of identification information beingdamaged or stained.

FIG. 8 illustrates a state of the present embodiment in which a robotarm 500 is used to move semiconductor devices 100 on a passage 510. Thesemiconductor devices 100 of the present example may be put on thepassage 510 such that convex portions 24 are in contact with the passage510. The robot arm 500 may move a plurality of the semiconductor devices100 in the +Y direction by collectively pushing out one or moresemiconductor devices 100 in the +Y direction. The robot arm 500 maysequentially move each group including a plurality of semiconductordevices 100 in the +Y direction. In the present example also, becausesecond surfaces 14 are not in direct contact with the passage 510, it ispossible to prevent pieces of identification information 15 provided tothe second surfaces 14 from being damaged or stained. In this way,convex portions 24 are also advantageous in a case in whichsemiconductor devices 100 are individually transported.

FIG. 9 is a drawing to explain outlines of concave portions 22 andoutlines of convex portions 24. Outlines of concave portions 22 may begreater than outlines of convex portions 24 in a housing 10 as seen inthe Z axis direction. For example, in a state of aligning in the X axisdirection positions of side surfaces 16 of two housings 10 that arestacked up in the Z axis direction, lengths of concave portions 22 inthe X axis direction is greater than lengths of convex portions 24 inthe X axis direction by Δ. Also, similarly in a state of aligningpositions in the Y axis direction, lengths of the concave portions 22 inthe Y axis direction may be greater than lengths of the convex portions24 in the Y axis direction by Δ. By providing at least one of the X andY axis directions with the play 4, fitting of the concave portions 22and convex portions 24 is facilitated. Thereby, it is possible toshorten work time in stacking up a plurality of semiconductor devices100.

FIG. 10 illustrates another example of lead frames 30. The lead frames30 of the present example have first regions 34, second regions 36, andbends 35. In the present example, the first regions 34 protrude parallelwith the X axis direction from side surfaces 16 of a housing 10. Also,the second regions 36 protrude in the Z axis direction in a forminclined with respect to the Z axis direction by a predetermined angleϕ, from an end of a first region 34 opposite from the side surface 16 ofthe housing 10. The bends 35 are positioned at connecting portionsbetween the first regions 34 and second regions 36.

In the present example, a straight line parallel with the Z axisdirection and the second region 36 form the angle ϕ. If a plurality ofsemiconductor devices 100 is stacked up, the angle ϕ may be an angle toallow the second regions 36 of lead frames 30, which are adjacent toeach other in the Z axis direction, not to contact (not interfere with)each other. The angle ϕ may be an acute angle. The angle ϕ is greaterthan 0 degrees and smaller than 90 degrees, for example. By taking thethickness of lead frames 30 into account, the angle ϕ may be 7 degreesor more to prevent lead frames 30 from contacting each other.

FIG. 11 illustrates an example in which a heat dissipation member 40 isexternally exposed on the second surface 14. In the present example, alength from the second surface 14 to an end surface 41 of the heatdissipation member 40 positioned outside of a housing 10 is defined as aprotruding length h of the heat dissipation member 40. Note that,although the protruding length h of the present example has a positivevalue, a protruding length h may be zero in another example. That is, anend surface 41 of a heat dissipation member 40 may be flush with thesecond surface 14. In the present example also, clearance (L₂−L₁−h) mayhave a positive value.

In the present example, the first surface 12 13 is provided with a pieceof identification information and the end surface 41 is provided with apiece of identification information 15. In the present example also, ifa plurality of semiconductor devices 100 is stacked up in the Z axisdirection, it is possible to prevent both or one of the piece ofidentification information 13 on the first surface 12 and the piece ofidentification information 15 on the end surface 41 from being damagedor stained. Also, just like the example of FIG. 8, if a semiconductordevice 100 is put on a passage 510 such that convex portions 24 are incontact with the passage 510, it is possible to prevent a piece ofidentification information 15 provided to the second surface 14 frombeing damaged or stained.

FIG. 12 illustrates the first modification examples of concave portions22 and convex portions 24. (A) to (C) illustrate a top view, a sideview, and a bottom view respectively, of a semiconductor device 100 inthe first modification example. A housing 10 may have two or moreconcave portions 22, and two or more convex portions 24 corresponding tothe concave portions 22 in the Z axis direction. Note that, the numberof concave portions 22 and convex portions 24 may mean the number ofconcave portions 22 and convex portions 24 independent of each other.For example, two concave portions 22 means two concave portions 22spaced apart from each other. Also, two convex portions 24 may mean twoconvex portions 24 spaced apart from each other.

A housing 10 of the present example has two concave portions 22-1 and22-3 provided to a diagonal line in the X-Y plane and two convexportions 24-1 and 24-3 provided to a diagonal line in the X-Y plane. Inthe present example also, it is possible to receive advantageous effectmentioned above, which is derived from the concave portions 22 and theconvex portions 24.

However, in another example, a pair of concave portions 22 and a pair ofconvex portions 24 may be provided to diagonal lines different fromthose of the present example. Yet in another example, a pair of convexportions 24 may be provided point-symmetrically with respect to thecenter of the second surface 14 of a rectangular shape. In this case,the pair of convex portions 24 may be provided such that they are incontact with a side of the second surface 14. Also, a pair of concaveportions 22 may be provided at positions corresponding to convexportions 24 in the Z axis direction.

FIG. 13 illustrates the second modification examples of concave portions22 and convex portions 24. (A) to (C) illustrate a top view, a sideview, and a bottom view respectively, of a semiconductor device 100 inthe second modification example. A housing 10 may include three concaveportions 22 not all of which are provided on a single straight line andthree convex portions 24 not all of which are on a single straight line.The housing 10 of the present example has three concave portions 22-1,22-3, and 22-4 and three convex portions 24-1, 24-3, and 24-4. Notethat, the housing 10 may have any three of concave portions 22-1, 22-2,22-3, and 22-4 and three convex portions 24 to correspond with the anythree concave portions in the Z axis direction. In the present examplealso, it is possible to receive advantageous effect mentioned above,which is derived from the concave portions 22 and the convex portions24.

Moreover, in the present example, if a plurality of semiconductordevices 100 is stacked up in the Z axis direction, it is possible toalign in the same orientation the orientation of the semiconductordevices 100 in the X and Y axis directions. For example, it is possibleto prevent a situation in which a semiconductor device 100 of the firstlayer is arranged with its lead frame 30-1 protruding in the +Xdirection and a semiconductor device 100 of the second layer is arrangedwith its lead frame 30-1 protruding in the −X direction. In this way, byaligning orientation of semiconductor devices 100, a task to take outthe semiconductor devices 100 one by one from their stacked state andattaching it to another member, substrate, or the like can befacilitated, for example.

FIG. 14 illustrates the third modification examples of concave portions22 and convex portions 24. (A) to (C) illustrate a top view, a sideview, and a bottom view respectively, of a semiconductor device 100 inthe third modification example. Similar to the example of FIG. 1, ahousing 10 of the present example has four concave portions 22 and fourconvex portions 24. However, convex portions 24 of the present examplehave shapes different from each other in the second surface 14 as seenin a direction parallel with the Z axis direction.

As shown in (A) of FIG. 14, a convex portion 24-1 of the present exampleconstitutes a part of a column with a radius R1. More specifically, theconvex portion 24-1 of the present example includes one of four portionsinto which the column with the radius R1 is divided in the X-Y plane.Also, a convex portion 24-2 in the present example is made of aquadrangular prism and a convex portion 24-3 in the present example ismade of a triangular prism. Moreover, a convex portion 24-4 in thepresent example constitutes a part of a column with radius R2 that isgreater than the radius R1. More specifically, the convex portion 24-4of the present example includes one of four portions into which thecolumn with the radius R2 is divided in the X-Y plane. Note that, eachof a part of a column may have a shape corresponding to a shape of acorner of a side surface 16 of the housing 10, and may not need to be acomplete shape of one of four divisions into which a circle is divided.

Also, concave portions 22 have shapes different from each other in thefirst surface 12 as seen in a direction parallel with the Z axisdirection. As shown in (C) of FIG. 14, the concave portions 22 of thepresent example have shapes correspond to the convex portions 24. If aplurality of housings 10 is made to overlap each other in the Z axisdirection, the convex portions 24 have shapes to fit the concaveportions 22 that are provided at corresponding positions in the Z axisdirection.

In the present example also, it is possible to receive advantageouseffect mentioned above, which is derived from the concave portions 22and the convex portions 24. Moreover, if stacked up in the Z axisdirection, it is possible to align orientation of semiconductor devices100 in the X and Y axis directions. Note that, the features of thepresent example may be applied to the examples of FIG. 12 and FIG. 13.

FIG. 15 illustrates the fourth modification examples of concave portions22 and convex portions 24. (A) to (C) illustrate a top view, a sideview, and a bottom view respectively, of a semiconductor device 100 inthe fourth modification example. A housing 10 may have concave portions22-a provided extending along two opposing sides of the first surface 12of a rectangular shape respectively and convex portions 24-b providedextending along two opposing sides of the second surface 14 of arectangular shape respectively. The housing 10 of the present examplehas concave portions 22-a 1 and 22-a 3 and convex portions 24-b 1 and24-b 3. However, the housing 10 may have concave portions 22-a 2 and22-a 4 and convex portions 24-b 2 and 24-b 4.

Although the concave portions 22 or convex portions 24 of the presentexample extend throughout each side respectively, concave portions 22 orconvex portions 24 of another example may be provided at a part of eachside respectively. If a length of the concave portion 22-a 1 in the Yaxis direction which extends in the Y axis direction is long compared toa length of the concave portion 22-a 1 in the X axis direction, it maybe deemed that the concave portion 22-a 1 is provided at a part of oneside. Similarly, if a length of a convex portion 24-b 1 in the Y axisdirection which extends in the Y axis direction is long compared to alength of the convex portion 24-b 1 in the X axis direction, it may bedeemed that the convex portion 24-b 1 is provided at a part of one side.In the present example also, it is possible to receive advantageouseffect mentioned above, which is derived from the concave portions 22and the convex portions 24.

FIG. 16 illustrates the fifth modification examples of concave portions22 and convex portions 24. (A) to (C) illustrate a top view, a sideview, and a bottom view respectively, of a semiconductor device 100 inthe fifth modification example. A housing 10 may have concave portions22-a provided extending along three sides in the first surface 12respectively and convex portions 24-b provided extending along threesides in the second surface 14 respectively. The housing 10 of thepresent example has concave portions 22-a 1, 22-a 2, and 22-a 3 andconvex portions 24-b 1, 24-b 2, and 24-b 3. Note that, the housing 10may have any three of concave portions 22-a 1, 22-a 2, 22-a 3, and 22-a4 and three convex portions 24-b to correspond with the any threeconcave portions 22-a in the Z axis direction.

In the present example also, it is possible to receive advantageouseffect mentioned above, which is derived from the concave portions 22and the convex portions 24. Moreover, if stacked up in the Z axisdirection, it is possible to align orientation of semiconductor devices100 in the X and Y axis directions.

FIG. 17 illustrates the sixth modification examples of concave portions22 and convex portions 24. (A) to (C) illustrate a top view, a sideview, and a bottom view respectively, of a semiconductor device 100 inthe sixth modification example. A housing 10 may have concave portions22-a annularly provided on the first surface 12 and convex portions 24-bannularly provided on the second surface 14. Note that, to enumerateexamples, the phrase ‘annularly’ includes an annular rectangle of whichcorners form right angles, an annular rectangle of which corners havecurvature, and an annular circle.

Annularly provided concave portions 22-a and 24-b may have width in theX-Y plane direction. In this case, the inside of the width may be madeof an annular rectangle of which corners have curvature, and the outerportion of the width may be made of an annular rectangle of whichcorners form right angles. In the present example also, it is possibleto receive advantageous effect mentioned above, which is derived fromthe concave portions 22 and the convex portions 24.

FIG. 18 illustrates the seventh modification examples of concaveportions 22 and convex portions 24. (A) to (C) illustrate a top view, aside view, and a bottom view respectively, of a semiconductor device 100in the seventh modification example. A housing 10 may have concaveportions 22-a provided extending along four sides in the first surface12 respectively and convex portions 24-b provided extending along foursides in the second surface 14 respectively. Note that, in the presentexample, the concave portions 22-a are provided at a part of four sidesrespectively, and the convex portions 24-b are provided at a part offour sides respectively.

A concave portion 22-a 1 of the present example does not extendthroughout one side of the first surface 12, and is provided at a partof the one side. In the present example, a length of the concave portion22-a 1 in the Y axis direction is long compared to a length of theconcave portion 22-a 1 in the X axis direction. The same relation isestablished in the other sides as well. In the present example also, itis possible to receive advantageous effect mentioned above, which isderived from the concave portions 22 and the convex portions 24.

Also, concave portions 22 (convex portions 24) provided to at least apair of two opposing sides may not necessarily arrangedpoint-symmetrically with respect to the center of the first surface 12(the second surface 14). Also, an extending length of concave portions22 (convex portions 24) provided to at least a pair of two opposingsides may be different from each other. Thereby, if semiconductordevices 100 are stacked up, it is possible to align orientation of thesemiconductor devices 100 in the X and Y axis directions.

FIG. 19 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 110 in the second embodiment. Thesemiconductor device 110 of the present example has lead frames 60 toprotrude from the second surface 14, instead of the lead frames 30 toprotrude from the side surfaces 16 of the housing 10 shown in the firstembodiment. Note that, the lead frames 60 of the present example are oneexample of external connection terminals.

The lead frames 60 of the present example have first regions 62, secondregions 64, and bends 63. In the present example, the first regions 62protrude from the second surface 14 to the +Z direction. Also, thesecond region 64 protrudes to the X axis direction from an end of thefirst region 62 opposite from the second surface 14 side. The bends 63are positioned at connecting portions between the first regions 62 andsecond regions 64.

In the present example, a protruding length from the second surface 14to ends 66 of the lead frames 60 in the Z axis direction is defined as alength L_(P). Note that, the end 66 is an end of a lead frame 60opposite from the second surface 14 side in the Z axis direction. Thatis, the length L_(P) of the present example is a length from the secondsurface 14 to the maximum height positions of the second regions 64 inthe Z axis direction.

In the present example, difference between the second length L₂ ofconvex portions 24 and the length L_(P) (L₂−L_(P)) is greater than thefirst length L₁ of concave portions 22 (i.e. L₁<L₂−L_(P)). Thesemiconductor device 110 of the present example has a heat dissipationmember 40 of which a protruding length h from the first surface 12 is apositive value. Hence, in the present example, {(L₂−L_(P))−(L₁+h)} is apositive value. Note that, in another example having a heat dissipationmember 40 of which a protruding length h is zero, (L₂−L_(P)−L₁) may be apositive value. Thereby, it is possible to receive advantageous effectmentioned above, which is derived from the concave portions 22 and theconvex portions 24.

FIG. 20 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 120 in the third embodiment. In the thirdembodiment, a protruding length h of a heat dissipation member 40 iszero. Also, the semiconductor device 120 of the present example has leadframes 30 of the first embodiment. In the present example, the secondlength L₂ is greater than the first length L₁. That is, in the presentexample, (L₂−L₁) is a positive value. Thereby, it is possible to receiveadvantageous effect mentioned above, which is derived from the concaveportions 22 and the convex portions 24.

FIG. 21 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 130 in the fourth embodiment. A housing 10of the present example has convex portions 44 provided in contact withthe second surface 14. Also, on the first surface 12, a heat dissipationmember 40 of the present example is externally exposed from the housing10, and the heat dissipation member 40 has concave portions 42 providedto an end surface 41. Note that, in the present example also, theconcave portions 42 and convex portions 44 are provided at positionscorresponding to each other in the Z axis direction.

The concave portions 42 of the present example are arranged at positionsthat do not interfere with a piece of identification information 13. Theconcave portions 42 may be provided at any positions around the piece ofidentification information 13. Similarly, the convex portions 44 of thepresent example may be arranged at positions that do not interfere witha piece of identification information 15. The convex portions 44 mayalso be provided around the piece of identification information 15. Inthe present example, if (L₂−L₁−h) is a positive value, it is possible toform clearance. In the present example also, it is possible to receiveadvantageous effect mentioned above, which is derived from the concaveportions 22 and the convex portions 24.

FIG. 22 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 140 in a modification example of thefourth embodiment. In the present example, the second surface 14 isprovided with concave portions 42, and convex portions 44 are providedin contact with an end surface 41 of a heat dissipation member 40. Inlight of these points, the fourth embodiment is modified. In the presentexample also, it is possible to receive advantageous effect mentionedabove, which is derived from the concave portions 22 and the convexportions 24. Note that, the second length L₂ of the present example is alength from an end surface 41 of the heat dissipation member 40 to ends25 of the convex portion 44. In the present example also, if (L₂−L₁−h)is a positive value, it is possible to form clearance.

FIG. 23 illustrates a state of placing a semiconductor device 140 on acooler 300. The cooler 300 has a plurality of fins 310 to extend in theY axis direction. The fins 310 may be spaced apart from each other inthe X axis direction. Coolant fluid 320 may flow in the +Y directionbetween two fins 310 adjacent to each other. Heat to be emitted fromsemiconductor chips 50 may be cooled by exchanging the heat with thefins 310 and the coolant fluid 320.

The cooler 300 of the present example has concave portions 330 to fitconvex portions 44 of the semiconductor device 140. The concave portions330 may be utilized for positioning the semiconductor device 140relative to the cooler 300. In the present example, because a relativeposition between the cooler 300 and the semiconductor device 140 isdecided in advance by using the convex portions 44 and the concaveportions 330, it is possible to perform a task to place thesemiconductor device 140 on the cooler 300 in a short period of time.Note that, if the heat dissipation member 40 has concave portions 42,the cooler 300 may have convex portions to fit the concave portions 42.

FIG. 24 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 150 in the fifth embodiment. Thesemiconductor device 150 of the present example does not have a heatdissipation member 40. The semiconductor device 150 is a discretesemiconductor chip, for example. In the present example, the firstsurface 12 and the second surface 14 on a housing 10 are surfaces of aresin sealing member 26.

The resin sealing member 26 may be provided with concave portions 22 andconvex portions 24. The convex portions 24 of the present exampleconstitute a part of a resin sealing member 26 in contact with the firstsurface 12. However, the convex portions 24 may be formed of glasshaving hardness higher than a resin material. Compared to a case inwhich the convex portions 24 are formed of the resin sealing member 26,if convex portions 24 are formed of a material different from that ofthe resin sealing member 26, it is possible to simplify formation of thehousing 10 in some cases.

The concave portions 22 of the present example are arranged at positionsthat do not interfere with a piece of identification information 13. Theconcave portions 22 may be provided at any positions around the piece ofidentification information 13. Similarly, the convex portions 24 of thepresent example are arranged at positions that do not interfere with apiece of identification information 15. The convex portions 24 may alsobe provided around the piece of identification information 15. In thepresent example also, the second length L₂ may be greater than the firstlength L₁. Thereby, it is possible to receive advantageous effectmentioned above, which is derived from the concave portions 22 and theconvex portions 24.

Note that, just like the first embodiment, four locations on the firstsurface 12 may be provided with the concave portions 22 respectively,and four locations on the second surface 14 may be provided with theconvex portions 24 respectively. Also, needless to say that featuresshown from FIG. 9 to FIG. 18 may be applied to the present example.

As mentioned above, the semiconductor device 150 of the present exampledoes not have a heat dissipation member 40. However, if the heatdissipation member 40 is provided just like the first to the fourthembodiments, the heat dissipation member 40 may be externally exposedfrom the first surface 12 or the second surface 14. For example, if theheat dissipation member 40 is externally exposed on the first surface12, an end surface 41 of the heat dissipation member 40 is provided withthe piece of identification information 13, instead of provided thefirst surface 12 with the piece of identification information 13.Instead of this, if the heat dissipation member 40 is externally exposedon the second surface 14, an end surface 41 of the heat dissipationmember 40 may be provided with the piece of identification information15, instead of providing the second surface 14 with the piece ofidentification information 15.

FIG. 25 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 160 in a modification example of the fifthembodiment. In the present example, convex portions 24 are provided incontact with the first surface 12 and the second surface 14 is providedwith concave portions 22. In light of these points, the present exampleis different from the fifth embodiment. The present example is the sameas the fifth embodiment except for those points.

FIG. 26 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 170 in the sixth embodiment. A housing 10of the present example does not have a frame member 20 and a resinsealing member 26. The housing 10 of the present example is formed byso-called transfer molding in which resin such as epoxy resin is pouredinto a mold to perform mold forming. Hence, the first surface 12, thesecond surface 14, and side surfaces 16 of the housing 10 of the presentexample are formed of the same resin material respectively. Note that,the side surfaces 16 are positioned between the first surface 12 and thesecond surface 14 in the Z axis direction.

Concave portions 22 of the present example may correspond to gateportions for injecting the resin material into a mold in transfermolding. Hence, the fact that ends 23 of the concave portions 22 isformed of the same resin material as the first surface 12 or the likemay be deemed as a feature to indicate that the housing 10 is formed bytransfer molding.

Note that, the concave portions 22 and convex portions 24 may functionas ejector portions for pushing out the housing 10 from the mold afterpouring molding resin into the mold. For example, ejector pins providedin the mold push out the concave portions 22 or the convex portions 24from the mold to the outside. Thereby, the housing 10 may be taken outfrom the mold. The present example is advantageous in that the mold maynot need to be provided with additional concave portions and convexportions in addition to the gate portions and the ejector portions.

The semiconductor device 170 of the present example includes a heatdissipation member 40 that is externally exposed on the first surface12. Also, corners of four locations in the first surface 12 are providedwith the concave portions 22 respectively, and corners of four locationsin the second surface 14 are provided with the convex portions 24respectively. In the present example also, clearance (L₂−L₁−h) may havea positive value. Thereby, it is possible to receive advantageous effectmentioned above, which is derived from the concave portions 22 and theconvex portions 24. Note that, as a modification example of the presentexample, just like the example shown in FIG. 11, the heat dissipationmember 40 may be externally exposed on the second surface 14.

FIG. 27 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 180 in the seventh embodiment. In thepresent example, a protruding length h of a heat dissipation member 40is zero. In light of this point, the present example is different fromthe sixth embodiment. In the present example, if (L₂−L₁) is a positivevalue, it is possible to receive advantageous effect mentioned above,which is derived from concave portions 22 and convex portions 24.

FIG. 28 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 190 in the eighth embodiment. Similar tothe fourth embodiment (FIG. 21), an end surface 41 of a heat dissipationmember 40 is provided with concave portions 42 of the present example.Also, convex portions 44 of the present example are provided atpositions corresponding to the concave portions 42 in the Z axisdirection, and are provided in contact with the second surface 14. Inlight of these points, the present example is different from the sixthembodiment. Note that, as a modification example of the present example,similar to the modification example of the fourth embodiment (FIG. 22),the convex portions 44 may be provided in contact with the end surface41, and the second surface 14 may be provided with concave portions 42.

FIG. 29 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 200 in the ninth embodiment. Similar tothe fifth embodiment (FIG. 24), a semiconductor device 200 of thepresent example does not have a heat dissipation member 40. In light ofthis point, the present example is different from the sixth embodiment.

FIG. 30 illustrates a top view (A), a side view (B), and a bottom view(C) of a semiconductor device 210 in the tenth embodiment. Thesemiconductor device 210 of the present example has a lead frame 80externally exposed on the first surface 12, and a lead frame 90externally exposed on the second surface 14. The semiconductor device210 may be cooled via the lead frames 80 and 90 externally exposed.

Similar to the sixth embodiment (FIG. 26), a housing 10 of the presentexample may be a resin housing formed by transfer molding. Hence, in thepresent example also, it is possible to receive advantageous effectmentioned above, which is derived from concave portions 22 and convexportions 24. The semiconductor device 210 of the present example haslead frames 70-1 to 70-4 protruding from a side surface 16-1. The leadframes 70-1 to 70-4 may be gate connecting components in thesemiconductor device 210. Also, the lead frame 80 is an emitter (or acathode) connecting component in the semiconductor device 210. The leadframe 90 is a collector (or an anode) connecting component in thesemiconductor device 210.

The lead frame 80 includes the first region 82 protruding from a sidesurface 16-3, and the second region 84 externally exposed on the firstsurface 12. Also, the lead frame 90 includes the first region 92protruding from the side surface 16-3, and the second region 94externally exposed on the second surface 14. In the present example, thesecond region 84 and the second region 94 function as heat dissipationmembers 40 of the first embodiment etc. That is, the semiconductordevice 210 of the present example can be cooled from both surfaces ofthe first surface 12 and the second surface 14. However, an insulatingsubstrate may be provided between the second region 84 and a cooler 300,and between the second region 94 and a cooler 300.

FIG. 31 illustrates inside of the housing 10 in the side view (B) ofFIG. 30. A collector electrode of a semiconductor chip 50 may beelectrically connected to the second region 84 of the lead frame 80 viaa solder layer 78-1. An emitter electrode of the semiconductor chip 50may be electrically connected to the second region 94 of the lead frame90 via a solder layer 78-2, a conductive spacer 76, and a solder layer78-3. Also, a gate metal layer of a semiconductor chip 50 may beconnected to the lead frames 70-1 to 70-4 via wires 59.

FIG. 32 is an exploded perspective view of the semiconductor device 210.However, to facilitate understanding, molding resin and the solderlayers 78 in the semiconductor device 210 are omitted. The semiconductordevice 210 of the present example has a semiconductor chip 50-1 that isan IGBT chip and a semiconductor chip 50-2 that is a FWD chip, which areprovided and arranged in the Y axis direction. The lower surfaces of thesemiconductor chips 50-1 and 50-2 are both electrically connected to thesecond region 84 of the lead frame 80. Also, the upper surfaces of thesemiconductor chips 50-1 and 50-2 are both electrically connected to thesecond region 94 of the lead frame 90 via the conductive spacer 76 etc.

While the embodiments of the present invention have been described, thetechnical scope of the invention is not limited to the above describedembodiments. It is apparent to persons skilled in the art that variousalterations and improvements can be added to the above-describedembodiments. It is also apparent from the scope of the claims that theembodiments added with such alterations or improvements can be includedin the technical scope of the invention.

It should be noted that the operations, procedures, steps, and stages ofeach process performed by a device, system, program, and method shown inthe claims, embodiments, or diagrams can be performed in any order aslong as the order is not indicated by “prior to,” “before,” or the likeand as long as the output from a previous process is not used in a laterprocess. Even if the process flow is described using phrases such as“first” or “next” in the claims, embodiments, or diagrams, it does notnecessarily mean that the process must be performed in this order.

What is claimed is:
 1. A semiconductor device comprising a housing,wherein the housing has: a first surface; a concave portion provided tothe first surface; a second surface to face toward the first surface;and a convex portion provided in contact with the second surface,wherein in a thickness direction of the housing directed from the firstsurface to the second surface, the concave portion and the convexportion are provided at positions corresponding to each other; an end ofthe concave portion is formed of a same resin material as that of thefirst surface; and the convex portion is formed of a resin material orglass.
 2. The semiconductor device according to claim 1, wherein asecond length of the convex portion from the second surface to an end ofthe convex portion in the thickness direction is greater than a firstlength of the concave portion from the first surface to an end of theconcave portion opposite from the first surface in the thicknessdirection.
 3. The semiconductor device according to claim 1, wherein thehousing has identification information provided to at least one of thefirst surface and the second surface.
 4. The semiconductor deviceaccording to claim 1, further including a heat dissipation memberexternally exposed on the first surface or the second surface, whereinthe heat dissipation member is electrically insulated from asemiconductor chip.
 5. The semiconductor device according to claim 4,wherein a second length of the convex portion from the second surface toan end of the convex portion in the thickness direction is greater thana length obtained by adding a protruding length of the heat dissipationmember protruding from the first surface or the second surface and afirst length of the concave portion from the first surface to an end ofthe concave portion opposite from the first surface in the thicknessdirection.
 6. The semiconductor device according to claim 4, wherein theheat dissipation member has identification information provided to anend surface of the heat dissipation member, the end surface beingexternally exposed, instead of identification information provided tothe first surface or the second surface on which the heat dissipationmember is externally exposed.
 7. The semiconductor device according toclaim 4, further comprising an external connection terminal protrudingfrom the second surface, wherein difference between a second length ofthe convex portion from the second surface to an end of the convexportion in the thickness direction and a protruding length from thesecond surface to an end of the external connection terminal oppositefrom the second surface in the thickness direction is greater than afirst length of the concave portion from the first surface to an end ofthe concave portion opposite from the first surface in the thicknessdirection.
 8. The semiconductor device according to claim 4, wherein thefirst surface is generally rectangular; at least one additional concaveportion is provided to the first surface; at least one additional convexportion is provided in contact with the second surface; in the thicknessdirection of the housing directed from the first surface to the secondsurface, the at least one additional concave portion and the at leastone additional convex portion are provided at positions corresponding toeach other; the convex portion is provided in a first corner of thegenerally rectangular first surface and the at least one additionalconvex portion is provided in a second corner of the generallyrectangular first surface diagonal to the first corner; and a thirdcorner and a fourth corner of the generally rectangular first surfacedifferent from the first corner and the second corner do not include aconvex portion.
 9. The semiconductor device according to claim 1,wherein the housing has: three concave portions, each being the concaveportion, not all of which are provided on a single straight line; andthree convex portions, each being the convex portion, not all of whichare provided on a single straight line.
 10. The semiconductor deviceaccording to claim 9, wherein: The three concave portions have shapesdifferent from each other in the first surface as seen in a directionparallel with the thickness direction; The three convex portions haveshapes different from each other in the second surface as seen in adirection parallel with the thickness direction; and when a plurality ofhousings, each being the housing, is made to overlap each other in thethickness direction, the three convex portions have shapes to fit thethree concave portions provided at corresponding positions in thethickness direction.
 11. The semiconductor device according to claim 1wherein: outer outlines of the first surface and the second surface arein rectangular shapes in the housing as seen in a direction parallelwith the thickness direction; and the housing has: four concaveportions, each being the concave portion, respectively provided atcorners of the first surface; and four convex portions, each being theconvex portion, respectively provided at corners of the second surface.12. The semiconductor device according to claim 1, wherein the firstsurface and the second surface are in rectangular shapes; and thehousing has: two concave portions, each being the concave portion,provided extending along two opposing sides of the first surfacerespectively; and two convex portions, each being the convex portion,provided extending along two opposing sides of the second surfacerespectively.
 13. The semiconductor device according to claim 12,wherein the housing has: three concave portions, each being the concaveportion, provided extending along three sides of the first surfacerespectively; and three convex portions, each being the convex portion,provided extending along three sides of the second surface respectively.14. The semiconductor device according to claim 13, wherein the housinghas: four concave portions, each being the concave portion, providedextending along four sides of the first surface respectively; and fourconvex portions, each being the convex portion, provided extending alongfour sides of the second surface respectively.
 15. The semiconductordevice according to claim 14, wherein the housing has: the concaveportion annularly provided on the first surface; and the convex portionannularly provided on the second surface.
 16. The semiconductor deviceaccording to claim 1, wherein the housing includes: a frame member; anda resin sealing member provided inside the frame member as the framemember is seen in the thickness direction, surfaces of the resin sealingmember constitute parts of the first surface and the second surface, andthe frame member is provided with the concave portion and the convexportion.
 17. The semiconductor device according to claim 1, wherein thehousing includes: a frame member; and a resin sealing member providedinside the frame member as the frame member is seen in the thicknessdirection, the first surface and the second surface are surfaces of theresin sealing member, and the resin sealing member is provided with theconcave portion and the convex portion.
 18. The semiconductor deviceaccording to claim 1, wherein: in the housing, the first surface, thesecond surface, and a side surface positioned between the first surfaceand the second surface in the thickness direction are formed of a sameresin material respectively; and the semiconductor device includes aheat dissipation member externally exposed on the first surface or thesecond surface.
 19. A semiconductor device comprising a housing, and aheat dissipation member, wherein: the housing has a first surface, and asecond surface to face toward the first surface, each of the firstsurface and the second surface being a surface of a resin memberrespectively; the heat dissipation member is externally exposed from thehousing on the first surface; the housing has a convex portion providedin contact with the second surface; the heat dissipation member has aconcave portion provided to an end surface of the heat dissipationmember; in a thickness direction of the housing directed from the firstsurface to the second surface, a position of the concave portion of theheat dissipation member corresponds to a position of the convex portionof the housing; an end of the concave portion is formed of a same resinmaterial as that of the first surface; and the convex portion is formedof a resin material or glass.
 20. A semiconductor device comprising ahousing, and a heat dissipation member, wherein: the housing has a firstsurface, and a second surface to face toward the first surface, each ofthe first surface and the second surface being a surface of a resinmember respectively; the heat dissipation member is externally exposedfrom the housing on the first surface; the housing has a concave portionprovided in contact with the second surface; the heat dissipation memberhas a convex portion provided to an end surface of the heat dissipationmember; in a thickness direction of the housing directed from the firstsurface to the second surface, a position of the convex portion of theheat dissipation member corresponds to a position of the concave portionof the housing; an end of the concave portion is formed of a same resinmaterial as that of the first surface; and the convex portion is formedof a resin material or glass.